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/*
* Copyright (c) 2018 Aurelien Jarno
*
* SPDX-License-Identifier: Apache-2.0
*/
#define DT_DRV_COMPAT atmel_sam_flash_controller
#define SOC_NV_FLASH_NODE DT_INST(0, soc_nv_flash)
#define FLASH_WRITE_BLK_SZ DT_PROP(SOC_NV_FLASH_NODE, write_block_size)
#define FLASH_ERASE_BLK_SZ DT_PROP(SOC_NV_FLASH_NODE, erase_block_size)
#include <zephyr/device.h>
#include <zephyr/drivers/flash.h>
#include <zephyr/init.h>
#include <zephyr/kernel.h>
#include <zephyr/sys/barrier.h>
#include <soc.h>
#include <string.h>
#define LOG_LEVEL CONFIG_FLASH_LOG_LEVEL
#include <zephyr/logging/log.h>
LOG_MODULE_REGISTER(flash_sam0);
/*
* The SAM flash memories use very different granularity for writing,
* erasing and locking. In addition the first sector is composed of two
* 8-KiB small sectors with a minimum 512-byte erase size, while the
* other sectors have a minimum 8-KiB erase size.
*
* For simplicity reasons this flash controller driver only addresses the
* flash by 8-KiB blocks (called "pages" in the Zephyr terminology).
*/
/*
* We only use block mode erases. The datasheet gives a maximum erase time
* of 200ms for a 8KiB block.
*/
#define SAM_FLASH_TIMEOUT_MS 220
#if defined(IFLASH0_PAGE_SIZE)
#define IFLASH_PAGE_SIZE IFLASH0_PAGE_SIZE
#endif
struct flash_sam_dev_cfg {
Efc *regs;
};
struct flash_sam_dev_data {
struct k_sem sem;
};
static const struct flash_parameters flash_sam_parameters = {
.write_block_size = FLASH_WRITE_BLK_SZ,
.erase_value = 0xff,
};
static int flash_sam_write_protection(const struct device *dev, bool enable);
static inline void flash_sam_sem_take(const struct device *dev)
{
struct flash_sam_dev_data *data = dev->data;
k_sem_take(&data->sem, K_FOREVER);
}
static inline void flash_sam_sem_give(const struct device *dev)
{
struct flash_sam_dev_data *data = dev->data;
k_sem_give(&data->sem);
}
/* Check that the offset is within the flash */
static bool flash_sam_valid_range(const struct device *dev, off_t offset,
size_t len)
{
if (offset > CONFIG_FLASH_SIZE * 1024) {
return false;
}
if (len && ((offset + len - 1) > (CONFIG_FLASH_SIZE * 1024))) {
return false;
}
return true;
}
/* Convert an offset in the flash into a page number */
static off_t flash_sam_get_page(off_t offset)
{
return offset / IFLASH_PAGE_SIZE;
}
/*
* This function checks for errors and waits for the end of the
* previous command.
*/
static int flash_sam_wait_ready(const struct device *dev)
{
const struct flash_sam_dev_cfg *config = dev->config;
Efc * const efc = config->regs;
uint64_t timeout_time = k_uptime_get() + SAM_FLASH_TIMEOUT_MS;
uint32_t fsr;
do {
fsr = efc->EEFC_FSR;
/* Flash Error Status */
if (fsr & EEFC_FSR_FLERR) {
return -EIO;
}
/* Flash Lock Error Status */
if (fsr & EEFC_FSR_FLOCKE) {
return -EACCES;
}
/* Flash Command Error */
if (fsr & EEFC_FSR_FCMDE) {
return -EINVAL;
}
/*
* ECC error bits are intentionally not checked as they
* might be set outside of the programming code.
*/
/* Check for timeout */
if (k_uptime_get() > timeout_time) {
return -ETIMEDOUT;
}
} while (!(fsr & EEFC_FSR_FRDY));
return 0;
}
/* This function writes a single page, either fully or partially. */
static int flash_sam_write_page(const struct device *dev, off_t offset,
const void *data, size_t len)
{
const struct flash_sam_dev_cfg *config = dev->config;
Efc * const efc = config->regs;
const uint32_t *src = data;
uint32_t *dst = (uint32_t *)((uint8_t *)CONFIG_FLASH_BASE_ADDRESS + offset);
LOG_DBG("offset = 0x%lx, len = %zu", (long)offset, len);
/* We need to copy the data using 32-bit accesses */
for (; len > 0; len -= sizeof(*src)) {
*dst++ = *src++;
/* Assure data are written to the latch buffer consecutively */
barrier_dsync_fence_full();
}
/* Trigger the flash write */
efc->EEFC_FCR = EEFC_FCR_FKEY_PASSWD |
EEFC_FCR_FARG(flash_sam_get_page(offset)) |
EEFC_FCR_FCMD_WP;
barrier_dsync_fence_full();
/* Wait for the flash write to finish */
return flash_sam_wait_ready(dev);
}
/* Write data to the flash, page by page */
static int flash_sam_write(const struct device *dev, off_t offset,
const void *data, size_t len)
{
int rc;
const uint8_t *data8 = data;
LOG_DBG("offset = 0x%lx, len = %zu", (long)offset, len);
/* Check that the offset is within the flash */
if (!flash_sam_valid_range(dev, offset, len)) {
return -EINVAL;
}
if (!len) {
return 0;
}
/*
* Check that the offset and length are multiples of the write
* block size.
*/
if ((offset % FLASH_WRITE_BLK_SZ) != 0) {
return -EINVAL;
}
if ((len % FLASH_WRITE_BLK_SZ) != 0) {
return -EINVAL;
}
flash_sam_sem_take(dev);
rc = flash_sam_write_protection(dev, false);
if (rc >= 0) {
rc = flash_sam_wait_ready(dev);
}
if (rc >= 0) {
while (len > 0) {
size_t eop_len, write_len;
/* Maximum size without crossing a page */
eop_len = -(offset | ~(IFLASH_PAGE_SIZE - 1));
write_len = MIN(len, eop_len);
rc = flash_sam_write_page(dev, offset, data8, write_len);
if (rc < 0) {
break;
}
offset += write_len;
data8 += write_len;
len -= write_len;
}
}
int rc2 = flash_sam_write_protection(dev, true);
if (!rc) {
rc = rc2;
}
flash_sam_sem_give(dev);
return rc;
}
/* Read data from flash */
static int flash_sam_read(const struct device *dev, off_t offset, void *data,
size_t len)
{
LOG_DBG("offset = 0x%lx, len = %zu", (long)offset, len);
if (!flash_sam_valid_range(dev, offset, len)) {
return -EINVAL;
}
memcpy(data, (uint8_t *)CONFIG_FLASH_BASE_ADDRESS + offset, len);
return 0;
}
/* Erase a single 8KiB block */
static int flash_sam_erase_block(const struct device *dev, off_t offset)
{
const struct flash_sam_dev_cfg *config = dev->config;
Efc * const efc = config->regs;
LOG_DBG("offset = 0x%lx", (long)offset);
efc->EEFC_FCR = EEFC_FCR_FKEY_PASSWD |
EEFC_FCR_FARG(flash_sam_get_page(offset) | 2) |
EEFC_FCR_FCMD_EPA;
barrier_dsync_fence_full();
return flash_sam_wait_ready(dev);
}
/* Erase multiple blocks */
static int flash_sam_erase(const struct device *dev, off_t offset, size_t len)
{
int rc = 0;
off_t i;
LOG_DBG("offset = 0x%lx, len = %zu", (long)offset, len);
if (!flash_sam_valid_range(dev, offset, len)) {
return -EINVAL;
}
if (!len) {
return 0;
}
/*
* Check that the offset and length are multiples of the write
* erase block size.
*/
if ((offset % FLASH_ERASE_BLK_SZ) != 0) {
return -EINVAL;
}
if ((len % FLASH_ERASE_BLK_SZ) != 0) {
return -EINVAL;
}
flash_sam_sem_take(dev);
rc = flash_sam_write_protection(dev, false);
if (rc >= 0) {
/* Loop through the pages to erase */
for (i = offset; i < offset + len; i += FLASH_ERASE_BLK_SZ) {
rc = flash_sam_erase_block(dev, i);
if (rc < 0) {
break;
}
}
}
int rc2 = flash_sam_write_protection(dev, true);
if (!rc) {
rc = rc2;
}
flash_sam_sem_give(dev);
/*
* Invalidate the cache addresses corresponding to the erased blocks,
* so that they really appear as erased.
*/
#ifdef __DCACHE_PRESENT
SCB_InvalidateDCache_by_Addr((void *)(CONFIG_FLASH_BASE_ADDRESS + offset), len);
#endif
return rc;
}
/* Enable or disable the write protection */
static int flash_sam_write_protection(const struct device *dev, bool enable)
{
#if defined(EFC_6450)
const struct flash_sam_dev_cfg *config = dev->config;
Efc *const efc = config->regs;
#endif
int rc = 0;
if (enable) {
rc = flash_sam_wait_ready(dev);
if (rc < 0) {
goto done;
}
#if defined(EFC_6450)
efc->EEFC_WPMR = EEFC_WPMR_WPKEY_PASSWD | EEFC_WPMR_WPEN;
} else {
efc->EEFC_WPMR = EEFC_WPMR_WPKEY_PASSWD;
#endif
}
done:
return rc;
}
#if CONFIG_FLASH_PAGE_LAYOUT
/*
* The notion of pages is different in Zephyr and in the SAM documentation.
* Here a page refers to the granularity at which the flash can be erased.
*/
static const struct flash_pages_layout flash_sam_pages_layout = {
.pages_count = DT_REG_SIZE(SOC_NV_FLASH_NODE) / FLASH_ERASE_BLK_SZ,
.pages_size = DT_PROP(SOC_NV_FLASH_NODE, erase_block_size),
};
void flash_sam_page_layout(const struct device *dev,
const struct flash_pages_layout **layout,
size_t *layout_size)
{
*layout = &flash_sam_pages_layout;
*layout_size = 1;
}
#endif
static const struct flash_parameters *
flash_sam_get_parameters(const struct device *dev)
{
ARG_UNUSED(dev);
return &flash_sam_parameters;
}
static int flash_sam_init(const struct device *dev)
{
struct flash_sam_dev_data *const data = dev->data;
k_sem_init(&data->sem, 1, 1);
return 0;
}
static const struct flash_driver_api flash_sam_api = {
.erase = flash_sam_erase,
.write = flash_sam_write,
.read = flash_sam_read,
.get_parameters = flash_sam_get_parameters,
#ifdef CONFIG_FLASH_PAGE_LAYOUT
.page_layout = flash_sam_page_layout,
#endif
};
static const struct flash_sam_dev_cfg flash_sam_cfg = {
.regs = (Efc *)DT_INST_REG_ADDR(0),
};
static struct flash_sam_dev_data flash_sam_data;
DEVICE_DT_INST_DEFINE(0, flash_sam_init, NULL,
&flash_sam_data, &flash_sam_cfg,
POST_KERNEL, CONFIG_FLASH_INIT_PRIORITY,
&flash_sam_api);