| # Copyright (c) 2020, Teslabs Engineering S.L. |
| # SPDX-License-Identifier: Apache-2.0 |
| |
| description: | |
| STM32 Flexible Memory Controller (SDRAM controller). |
| |
| The FMC SDRAM controller can be used to interface with external SDRAM |
| memories. Up to 2 SDRAM banks are supported with independent configuration. It |
| is worth to note that while settings are independent, some are shared or are |
| required to be set according to the most constraining device. Refer to the |
| properties description or the datasheet for more details. |
| |
| The FMC SDRAM controller is defined below the FMC node and SDRAM banks are |
| defined as child nodes of the FMC SDRAM node. You can either have bank 1 (@0), |
| bank 2 (@1) or both. You can enable the FMC SDRAM controller in your board |
| DeviceTree file like this: |
| |
| &fmc { |
| status = "okay"; |
| pinctrl-0 = <&fmc_nbl0_pe0 &fmc_nbl1_pe1 &fmc_nbl2_pi4...>; |
| |
| sdram { |
| status = "okay"; |
| |
| power-up-delay = <100>; |
| num-auto-refresh = <8>; |
| mode-register = <0x220>; |
| refresh-rate = <603>; |
| |
| bank@0 { |
| reg = <0>; |
| |
| st,sdram-control = <STM32_FMC_SDRAM_NC_9 |
| STM32_FMC_SDRAM_NR_12 |
| STM32_FMC_SDRAM_MWID_32 |
| STM32_FMC_SDRAM_NB_4 |
| STM32_FMC_SDRAM_CAS_2 |
| STM32_FMC_SDRAM_SDCLK_PERIOD_2 |
| STM32_FMC_SDRAM_RBURST_ENABLE |
| STM32_FMC_SDRAM_RPIPE_0>; |
| st,sdram-timing = <2 6 4 6 2 2 2>; |
| }; |
| |
| bank@1 { |
| reg = <1>; |
| ... |
| }; |
| }; |
| }; |
| |
| Note that you will find definitions for the st,sdram-control field at |
| dt-bindings/memory-controller/stm32-fmc-sdram.h. This file is already included |
| in the SoC DeviceTree files. |
| |
| Finally, in order to make the memory available you will need to define new |
| memory device/s in DeviceTree: |
| |
| sdram1: sdram@c0000000 { |
| device_type = "memory"; |
| reg = <0xc000000 DT_SIZE_M(X)>; |
| }; |
| |
| sdram2: sdram@d0000000 { |
| device_type = "memory"; |
| reg = <0xd000000 DT_SIZE_M(X)>; |
| }; |
| |
| It is important to use sdram1 and sdram2 node labels for bank 1 and bank 2 |
| respectively. Memory addresses are 0xc0000000 and 0xd0000000 for bank 1 and |
| bank 2 respectively. |
| |
| compatible: "st,stm32-fmc-sdram" |
| |
| include: base.yaml |
| |
| properties: |
| label: |
| required: true |
| |
| "#address-cells": |
| required: true |
| const: 1 |
| |
| "#size-cells": |
| required: true |
| const: 0 |
| |
| power-up-delay: |
| type: int |
| default: 100 |
| description: Power-up delay in microseconds. |
| |
| num-auto-refresh: |
| type: int |
| default: 8 |
| description: Number of auto-refresh commands issued. |
| |
| mode-register: |
| type: int |
| required: true |
| description: |
| A 14-bit field that defines the SDRAM Mode Register content. The mode |
| register bits are also used to program the extended mode register for |
| mobile SDRAM. |
| |
| refresh-rate: |
| type: int |
| required: true |
| description: |
| A 13-bit field defines the refresh rate of the SDRAM device. It is |
| expressed in number of memory clock cycles. It must be set at least to |
| 41 SDRAM clock cycles. |
| |
| child-binding: |
| description: SDRAM bank. |
| |
| properties: |
| reg: |
| type: int |
| required: true |
| |
| st,sdram-control: |
| type: array |
| required: true |
| description: | |
| SDRAM control configuration. Expected fields, in order, are, |
| |
| - NC: Number of bits of a column address. |
| - NR: Number of bits of a row address. |
| - MWID: Memory device width. |
| - NB: Number of internal banks. |
| - CAS: SDRAM CAS latency in number of memory clock cycles. |
| - SDCLK: SDRAM clock period. If two SDRAM devices are used both should |
| have the same value. |
| - RBURST: Enable burst read mode. If two SDRAM devices are used both |
| should have the same value. |
| - RPIPE: Delay, in fmc_ker_ck clock cycles, for reading data after CAS |
| latency. If two SDRAM devices are used both should have the same |
| value. |
| |
| st,sdram-timing: |
| type: array |
| required: true |
| description: | |
| SDRAM timing configuration. Expected fields, in order, are, |
| |
| - TMRD: Delay between a Load Mode Register command and an Active or |
| Refresh command in number of memory clock cycles. |
| - TXSR: Delay from releasing the Self-refresh command to issuing the |
| Activate command in number of memory clock cycles. If two SDRAM |
| devices are used, the FMC_SDTR1 and FMC_SDTR2 must be programmed with |
| the same TXSR timing corresponding to the slowest SDRAM device |
| - TRAS: Minimum Self-refresh period in number of memory clock cycles. |
| - TRC: Delay between the Refresh command and the Activate command, as |
| well as the delay between two consecutive Refresh commands. It is |
| expressed in number of memory clock cycles. If two SDRAM devices are |
| used, the TRC must be programmed with the timings of the slowest |
| device in both banks. |
| - TWP: Delay between a Write and a Precharge command in number of memory |
| clock cycles |
| - TRP: Delay between a Precharge command and another command in number |
| of memory clock cycles. If two SDRAM devices are used, the TRP must be |
| programmed with the timing of the slowest device in both banks. |
| - TRCD: Delay between the Activate command and a Read/Write command in |
| number of memory clock cycles. |